NCEPOWER  Transistors NCE30TD60BD

Description
TO-263-2 IGBT Transistors / Modules ROHS
Request a Quote
Description
TO-263-2 IGBT Transistors / Modules ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE30TD60BD - ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE30TD60BD
Transistors NCE30TD60BD
TO-263-2 IGBT Transistors / Modules ROHS

TO-263-2 IGBT Transistors / Modules ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE30TD60BD
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFETs - SuperFAP-E3 Model: FMV23N50E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
Transistor Type Power-MOSFET
Package Type TO-220F(SLS)
Transistor Grade / Operating Range Commercial; Industrial; Automotive
View Details
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die - QPD2040D - Qorvo
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
Integrated Circuits (ICs) - PMIC - Full, Half-Bridge Drivers - 1159762-CSD95491Q5MCT - Win Source Electronics
Specs
Transistor Type MOSFET; Power-MOSFET
Package Type SOT3
View Details
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details