NCEPOWER  Transistors NCE2312

Description
20V 4.5A 1.25W 33mΩ@4.5V,4.5A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - NCE2312 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
20V 4.5A 1.25W 33mΩ@4.5V,4.5A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE2312 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE2312
Transistors NCE2312
20V 4.5A 1.25W 33mΩ@4.5V,4.5A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

20V 4.5A 1.25W 33mΩ@4.5V,4.5A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE2312
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

- BC807-25LVL - Rochester Electronics
Nexperia B.V.
SOT23 Bipolar Transistor
BC807-25LVL
Specs
Polarity PNP
Package Type SOT23
View Details
8 suppliers
Igbt, 2 Pack Module 1200V, 200A, M234; Continuous Collector Current Fuji Electric - 76R7060 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 2 Pack Module 1200V, 200A, M234; Continuous Collector Current Fuji Electric
2MBI200U4H-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
Bipolar Transistors - 154902P - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
154902P
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT23; SOT-23
View Details
Single FETs, MOSFETs - 448-AIMZHN120R080M1TXKSA1-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMZHN120R080M1TXKSA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-247; TO-247-4
View Details