Navitas Semiconductor Single FETs, MOSFETs G3R60MT07D

G3R60MT07D is a 750 V silicon carbide MOSFET in a TO-247-3 package, designed for high-efficiency switching applications such as solar inverters, EV charging, and DC-DC converters. It has a typical on-state resistance of 60 mΩ at 25°C and can handle a continuous drain current of 30 A at a case temperature of 100°C. The device features a robust body diode with low forward voltage and reverse recovery charge, and is 100% avalanche tested. Thermal resistance from junction to case is specified at 0.68 to 0.88 °C/W, and the part weighs 6.1 g with a recommended mounting torque of 1.1 Nm. It supports a gate-source voltage range of -5 V to +15 V and operates from -55°C to 175°C.