Navitas Semiconductor JFETs 2N7638-GA

The 2N7638-GA is a silicon carbide junction transistor designed for high-temperature switching applications, with a drain-source voltage rating of 650 V and a continuous drain current of 8 A at 158 °C case temperature. It features a drain-source on-resistance of 180 mΩ at 25 °C, rising to 490 mΩ at 250 °C, and operates up to a maximum junction temperature of 250 °C. The device is housed in a hermetic SMD-0.5/TO-276 package and meets RoHS compliance. It exhibits a positive temperature coefficient for easy paralleling, low gate charge, and low intrinsic capacitance, with switching energies of 34 µJ on and 64 µJ off at 175 °C, and 43 µJ on and 82 µJ off at 250 °C. The thermal resistance from junction to case is 1 °C/W.