Nanjing Micro One Electronics Inc. Transistors MEM2313SG

Description
30V 6A 65mΩ@10V,6A 1W 2V@250uA 2 P-Channel SOIC-8-150mil MOSFETs ROHS
Description
30V 6A 65mΩ@10V,6A 1W 2V@250uA 2 P-Channel SOIC-8-150mil MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - MEM2313SG - ODG (Origin Data Global)
Shenzhen, China
Transistors
MEM2313SG
Transistors MEM2313SG
30V 6A 65mΩ@10V,6A 1W 2V@250uA 2 P-Channel SOIC-8-150mil MOSFETs ROHS

30V 6A 65mΩ@10V,6A 1W 2V@250uA 2 P-Channel SOIC-8-150mil MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MEM2313SG
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
View Details
1450A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K4 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Fuji Electric Corp. of America
Specs
Transistor Type Bipolar RF
View Details