NPN epitaxial planar silicon transistor in TO-92 package for general purpose high voltage applications, with a collector-emitter voltage rating of 400 V, continuous collector current of 300 mA, and power dissipation of 625 mW at 25°C ambient temperature. Operating and storage junction temperature ranges from -55°C to +150°C. Thermal resistance from junction to ambient is 200 °C/W. Features collector cutoff current below 100 nA at 400 V, DC current gain of 50 to 200, and collector-emitter saturation voltage below 0.5 V at 10 mA collector current. Output capacitance is less than 7 pF at 1 MHz. Dimensions are 4.32 to 5.33 mm in length, 4.45 to 5.2 mm in width, and 3.18 to 4.19 mm in thickness. Meets RoHS compliance.
TRANS, NPN, 400V, 300MA, 150DEG C, 625MW; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:300mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 08N7670 |
| Product Name | Trans, Npn, 400V, 300Ma, 150Deg C, 625Mw; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 400V, 300Ma, 150Deg C, 625Mw; Transistor Polarity Multicomp Pro |