The MPIM900H212TG5 is a half-bridge IGBT module rated for 1200 V and 900 A continuous current, designed for motor drives and renewable energy systems. It uses a trench gate, generation 5 IGBT with a typical Vce(sat) of 1.75 V and 10 μs short-circuit withstand. The module has a copper base and alumina substrates, with a junction-to-case thermal resistance of 29.5 °C/kW for the IGBT. It includes an NTC thermistor with 5 kΩ at 25 °C and operates from -40 °C to 150 °C junction temperature. The isolation voltage is 4000 V AC RMS. Mounting uses M5 screws at 3-6 Nm torque. The device is RoHS compliant and weighs 900 g.
IGBT MODULE, DUAL N CH, 1.2KV, 900A ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 92AH5770 |
| Product Name | Igbt Module, Dual N Ch, 1.2Kv, 900A Rohs Compliant Multicomp Pro |
| Package Type | TO-3 |
