The MPIM650H217TG5 is a half-bridge IGBT module rated for 1700 V collector-emitter voltage and 650 A continuous collector current, designed for motor drives, high-power converters, and renewable energy systems. It features a trench gate, generation 5 TMOS IGBT with a copper base plate and Al2O3 substrates, achieving 10 μs short-circuit withstand capability. The module has a maximum junction temperature of 150 °C and a thermal resistance from junction to case of 30 °C/kW for the IGBT and 54 °C/kW for the diode. Electrical isolation is rated at 4000 V AC RMS for one minute. The package includes M5 mounting screws with a torque range of 3-6 Nm and M8 electrical connections, and the device weighs 900 g. It meets IEC 60747-9 standards and incorporates an NTC thermistor with 5 kΩ resistance at 25 °C. The part is RoHS compliant.
IGBT MODULE, DUAL N CH, 1.7KV, 650A ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 92AH5769 |
| Product Name | Igbt Module, Dual N Ch, 1.7Kv, 650A Rohs Compliant Multicomp Pro |
| Package Type | TO-3 |
