The MPIM600M112TG5 is a half-bridge IGBT module rated for 1200 V collector-emitter voltage and 600 A continuous collector current, designed for motor drives, renewable energy conversion, and high-reliability inverters. It features a Trench Gate Generation 5 TMOS IGBT with 10 μs short-circuit withstand capability and a copper baseplate with Al2O3 substrates. The module has a case-to-heatsink thermal resistance of 34 °C/kW for the IGBT and 40 °C/kW for the diode under 5 Nm mounting torque, with a maximum junction temperature of 150 °C. It supports a peak collector current of 1200 A for 1 ms and has a gate-emitter voltage rating of ±20 V. The package includes an electrically isolated baseplate with 2500 V RMS isolation, and internal inductance of 22 nH. It complies with IEC 60747-9 and is RoHS compliant. Weight is 345 g.
IGBT MODULE, DUAL N CH, 1.2KV, 600A ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 92AH5767 |
| Product Name | Igbt Module, Dual N Ch, 1.2Kv, 600A Rohs Compliant Multicomp Pro |
| Package Type | TO-3 |
