The MPIM1000H117TG5 is a half-bridge IGBT module rated for 1700 V collector-emitter voltage and 1000 A continuous collector current, designed for motor drives, high-power converters, and renewable energy applications. It features a trench gate, generation 5 TMOS IGBT with 10 μs short-circuit withstand capability, Cu base with Al2O3 substrates, and a low-inductance layout compatible with grounded heat sinks. The module has an isolation voltage of 4000 V AC RMS and operates with a maximum junction temperature of 150 °C. Thermal resistance from junction to case is 20 °C/kW for the IGBT and 36 °C/kW for the diode. Mounting is via M5 screws with a torque of 3-6 Nm. The device meets IEC 60747-9 and is housed in an H1 case format.
IGBT MODULE, DUAL N CH, 1.7KV, 1KA ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 92AH5771 |
| Product Name | Igbt Module, Dual N Ch, 1.7Kv, 1Ka Rohs Compliant Multicomp Pro |
| Package Type | TO-3 |
