NPN silicon planar epitaxial transistor with a collector-emitter voltage rating of 80 V and a continuous collector current of 1 A, housed in a TO-18 metal can package. The device has a power dissipation of 1.8 W at Tc = 25°C, with a junction temperature range of -65 to +200°C. Transition frequency is 100 to 400 MHz, and the DC current gain hFE ranges from 100 to 300 at Ic = 150 mA and Vce = 10 V. Input and output capacitances are less than 60 pF and 12 pF respectively. Thermal resistance from junction to case is 70 °C/W. The part is RoHS compliant.
TRANS, NPN, 80V, 1A, 200DEG C, 1.8W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:400MHz; Power Dissipation Pd:1.8W; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8640 |
| Product Name | Trans, Npn, 80V, 1A, 200Deg C, 1.8W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 80V, 1A, 200Deg C, 1.8W; Transistor Polarity Multicomp Pro |
