NPN silicon transistor for high voltage applications, rated at 350 V collector-emitter voltage and 1 A continuous collector current, housed in a TO-39 metal can package with dimensions between 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in width. It dissipates up to 5 W at 25°C case temperature and operates with a junction temperature range of -65 to +200°C. The device has a current gain (hFE) of 40 to 160 at 20 mA collector current, a current gain-bandwidth product exceeding 15 MHz, and collector-emitter saturation voltage below 0.5 V at 50 mA collector current. It meets RoHS requirements.
TRANS, NPN, 350V, 1A, 200DEG C, 5W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:15MHz; Power Dissipation Pd:5W; DC Collector Current:1A; DC Current Gain hFE:40hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8639 |
| Product Name | Trans, Npn, 350V, 1A, 200Deg C, 5W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 350V, 1A, 200Deg C, 5W; Transistor Polarity Multicomp Pro |
