multicomp PRO Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro MP001166

Description
TRANS, NPN, 40V, 0.8A, 200DEG C, 1.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes
Description
TRANS, NPN, 40V, 0.8A, 200DEG C, 1.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes
Datasheet
Datasheet Summary
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NPN silicon planar switching transistor for switching applications, housed in a TO-39 metal can package with dimensions of 8.5-9.39 mm in height, 7.74-8.5 mm in body width, and 12.7 mm in lead length. It has a collector-emitter voltage rating of 40 V, continuous collector current of 800 mA, and power dissipation of 800 mW at 25°C ambient temperature. Junction temperature ranges from -65°C to +200°C. The transistor has a transition frequency of 300 MHz, DC current gain (hFE) between 100 and 300 at Ic = 150 mA and Vce = 10 V, and collector-emitter saturation voltage of up to 1 V at Ic = 500 mA and Ib = 50 mA. Switching times include delay time <10 ns, rise time <25 ns, storage time <225 ns, and fall time <60 ns under specified conditions.

Datasheet Summary
Powered by GS/AI

NPN silicon planar switching transistor for switching applications, housed in a TO-39 metal can package with dimensions of 8.5-9.39 mm in height, 7.74-8.5 mm in body width, and 12.7 mm in lead length. It has a collector-emitter voltage rating of 40 V, continuous collector current of 800 mA, and power dissipation of 800 mW at 25°C ambient temperature. Junction temperature ranges from -65°C to +200°C. The transistor has a transition frequency of 300 MHz, DC current gain (hFE) between 100 and 300 at Ic = 150 mA and Vce = 10 V, and collector-emitter saturation voltage of up to 1 V at Ic = 500 mA and Ib = 50 mA. Switching times include delay time <10 ns, rise time <25 ns, storage time <225 ns, and fall time <60 ns under specified conditions.

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Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro - 29AH8636 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro
29AH8636
Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro 29AH8636
TRANS, NPN, 40V, 0.8A, 200DEG C, 1.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes

TRANS, NPN, 40V, 0.8A, 200DEG C, 1.2W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:1.2W; DC Collector Current:800mA; DC Current Gain hFE:100hFE; Transistor RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 29AH8636
Product Name Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro
Transistor Type Trans, Npn, 40V, 0.8A, 200Deg C, 1.2W; Transistor Polarity Multicomp Pro
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