NPN silicon planar transistor in a TO-39 metal can package, rated for a collector-emitter voltage of 50 V, collector current of 150 mA, and power dissipation of 3 W at Tc = 25°C. The junction temperature range is -65°C to +200°C. It has a transition frequency of 70 MHz, DC current gain (hFE) between 100 and 300 at Ic = 150 mA and Vce = 10 V, collector-emitter saturation voltage of 0.5 V, and base-emitter saturation voltage of 1.3 V under the same conditions. Output and input capacitances are 25 pF and 80 pF respectively. The device meets RoHS compliance.
TRANS, NPN, 50V, 0.5A, 200DEG C, 3W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:70MHz; Power Dissipation Pd:3W; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8634 |
| Product Name | Trans, Npn, 50V, 0.5A, 200Deg C, 3W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 50V, 0.5A, 200Deg C, 3W; Transistor Polarity Multicomp Pro |