NPN silicon planar transistor for general-purpose switching and amplification, housed in a TO-39 metal can package with dimensions between 8.5 and 9.39 mm in height and 7.74 to 8.5 mm in body diameter. Rated for a continuous collector current of 500 mA and a collector-emitter voltage of 80 V, with a maximum power dissipation of 3 W at Tc = 25°C. Junction temperature range extends from -65°C to +200°C. Features a current gain bandwidth product of 50 MHz, input capacitance of 85 pF, and output capacitance of 15 pF at 1 MHz. Thermal resistance from junction to case is 58.3 °C/W. Compliant with RoHS standards.
TRANS, NPN, 80V, 0.5A, 200DEG C, 3W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:3W; DC Collector Current:500mA; DC Current Gain hFE:40hFE; Transistor Case RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH8635 |
| Product Name | Trans, Npn, 80V, 0.5A, 200Deg C, 3W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Npn, 80V, 0.5A, 200Deg C, 3W; Transistor Polarity Multicomp Pro |