The MJE3055T is an NPN silicon power transistor in a TO-220 package, designed for general-purpose amplifier and switching applications. It has a continuous collector current rating of 10 A, a collector-emitter voltage of 60 V, and a total power dissipation of 75 W at 25°C, derating at 0.6 W/°C above that temperature. The junction-to-case thermal resistance is 1.67 °C/W, with an operating and storage junction temperature range of -55°C to +150°C. The DC current gain ranges from 20 to 100 at a collector current of 4 A. The collector-emitter saturation voltage is 1.1 V max at 4 A collector current and 400 mA base current. The device is RoHS compliant and meets the TO-220 dimensional specifications with a collector terminal connected to the case.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2 MHz, 75 W, 10 A, 20 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 38K5614 |
| Product Name | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 60 V, 2 Mhz, 75 W, 10 A, 20 Rohs Compliant Multicomp Pro |
| Polarity | NPN |