multicomp PRO Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro MJ13335

Description
TRANS, NPN, 500V, 20A, 200DEG C, 275W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:275W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-RoHS Compliant: Yes
Description
TRANS, NPN, 500V, 20A, 200DEG C, 275W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:275W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The MJ13335 is an NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits, such as switch-mode regulators, inverters, and motor controls. It is housed in a TO-3 package with dimensions of 38.75mm to 39.96mm in height, 19.28mm to 22.23mm in width, and 29.9mm to 30.4mm in length. The transistor has a collector-emitter voltage rating of 500V, a continuous collector current of 20A, and a maximum power dissipation of 275W at 25°C case temperature, derating at 1W/°C. It operates over a junction temperature range of -65°C to +200°C, with a thermal resistance from junction to case of 1°C/W. Switching speeds include an inductive fall time of 400ns at -25°C and a storage time of 2.5μs at 25°C. The device meets RoHS compliance.

Datasheet Summary
Powered by GS/AI

The MJ13335 is an NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits, such as switch-mode regulators, inverters, and motor controls. It is housed in a TO-3 package with dimensions of 38.75mm to 39.96mm in height, 19.28mm to 22.23mm in width, and 29.9mm to 30.4mm in length. The transistor has a collector-emitter voltage rating of 500V, a continuous collector current of 20A, and a maximum power dissipation of 275W at 25°C case temperature, derating at 1W/°C. It operates over a junction temperature range of -65°C to +200°C, with a thermal resistance from junction to case of 1°C/W. Switching speeds include an inductive fall time of 400ns at -25°C and a storage time of 2.5μs at 25°C. The device meets RoHS compliance.

Suppliers

Company
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Description
Supplier Links
Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro - 29AH9874 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro
29AH9874
Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro 29AH9874
TRANS, NPN, 500V, 20A, 200DEG C, 275W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:275W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-RoHS Compliant: Yes

TRANS, NPN, 500V, 20A, 200DEG C, 275W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:20A; Power Dissipation:275W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 29AH9874
Product Name Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro
Transistor Type Trans, Npn, 500V, 20A, 200Deg C, 275W; Transistor Polarity Multicomp Pro
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