multicomp PRO Trans, Npn, 80V, 2A, 150Deg C, 25W; Transistor Polarity Multicomp Pro BD237

The BD237 is an NPN epitaxial silicon power transistor intended for medium power linear switching applications in a TO-126 package, measuring 7.4 to 7.8 mm in width, 10.5 to 10.8 mm in length, and 2.4 to 2.7 mm in thickness. It has a maximum collector-emitter voltage of 80 V, a continuous collector current of 2 A, and a power dissipation of 25 W at 25°C, derating at 10 mW/°C above that temperature. The junction temperature range is -65°C to +150°C, with a thermal resistance from junction to case of 100°C/W. The current gain (hFE) ranges from 25 to 40 depending on collector current, and the transition frequency is 3 MHz. The part complies with RoHS.