PNP silicon planar epitaxial transistor in SOT-23 package for surface mount applications, with a collector-emitter voltage rating of 30 V and a continuous collector current of 100 mA. Total power dissipation is 250 mW at 25°C, and the junction temperature rating is 150°C. The device has a minimum small-signal current gain (hFE) of 420 at IC = 2 mA and VCE = 5 V, with a transition frequency exceeding 100 MHz. Base-emitter voltage ranges from 600 mV to 750 mV at IC = 2 mA, and collector-emitter saturation voltage is less than 300 mV at IC = 10 mA and IB = 0.5 mA. Collector capacitance is 4.5 pF at VC = 10 V. The part features a pin configuration of base, emitter, collector from left to right when viewed from the front with the flat side facing the user.
TRANSISTOR, PNP, 30V, 100mA, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:100mA; Power Dissipation:250mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 08N7619 |
| Product Name | Transistor, Pnp, 30V, 100Ma, Sot-23; Transistor Polarity Multicomp Pro |
| Transistor Type | Transistor, Pnp, 30V, 100Ma, Sot-23; Transistor Polarity Multicomp Pro |