The 2N5679 is a silicon epitaxial PNP bipolar transistor in a TO-39 package, designed for amplifier and switching applications. It has a maximum collector-emitter voltage of 100 V, a continuous collector current of 1 A, and a total device dissipation of 1 W at +25°C ambient temperature. The junction-to-case thermal resistance is 17.4 °C/W, and the operating junction temperature ranges from -65°C to +200°C. The transistor features a base-emitter voltage of 1 V at 250 mA collector current and a DC current gain between 5 and 150. The transition frequency is 30 MHz at 100 mA collector current. Pin configuration is standard: emitter, base, collector. Dimensions range from 8.5 to 9.39 mm in length, 6.09 to 6.6 mm in width, and 12.7 mm in lead length.
BIPOLAR TRANSISTOR, PNP, -100V, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0728 |
| Product Name | Bipolar Transistor, Pnp, -100V, To-39; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
