The 2N4399 is a PNP silicon high-power transistor designed for amplifier and switching applications. It is packaged in a TO-3 case measuring 38.75 to 39.96 mm in length, 19.28 to 22.23 mm in width, and 7.96 to 9.28 mm in thickness, with the collector connected to the case. The transistor has a maximum collector-emitter voltage of 60 V, a continuous collector current of 30 A, and a total power dissipation of 200 W at 25°C case temperature, derating at 1.15 W/°C above that point. The junction temperature ranges from -65°C to +200°C, with a thermal resistance from junction to case of 0.875°C/W. Collector-emitter saturation voltage is specified at 0.75 V maximum at 10 A collector current and 1 A base current. The device meets no specified industry standards beyond its electrical and thermal ratings.
TRANS, PNP, -60V, -30A, 200DEG C, 200W; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AH9879 |
| Product Name | Trans, Pnp, -60V, -30A, 200Deg C, 200W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Pnp, -60V, -30A, 200Deg C, 200W; Transistor Polarity Multicomp Pro |
