NPN silicon planar epitaxial transistor in TO-92 package, with a collector-emitter voltage rating of 30 V, continuous collector current of 600 mA, and power dissipation of 625 mW at 25°C. The device has a thermal resistance of 200 °C/W, an operating and storage junction temperature range of -55°C to +150°C, and a transition frequency of 100 MHz. Dimensions are specified as 4.32 to 5.33 mm in height, 4.45 to 5.2 mm in width, and 3.18 to 4.19 mm in depth. The transistor is rated for through-hole mounting with three pins.
BIPOLAR TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:800mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 08N7700 |
| Product Name | Bipolar Transistor, Npn, 30V, To-92; Transistor Polarity Multicomp Pro |
| Polarity | NPN |