multicomp PRO Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro 2N2219A

Description
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Description
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

NPN silicon planar switching transistor with a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA, housed in a TO-39 metal can package measuring 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in body diameter. The device has a power dissipation of 800 mW at 25°C ambient temperature and 3 W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) range of 100 to 300 at 150 mA collector current, collector-emitter saturation voltage up to 1 V at 500 mA collector current, and a transition frequency exceeding 300 MHz. Switching times are specified with delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns under specified test conditions.

Datasheet Summary
Powered by GS/AI

NPN silicon planar switching transistor with a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA, housed in a TO-39 metal can package measuring 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in body diameter. The device has a power dissipation of 800 mW at 25°C ambient temperature and 3 W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) range of 100 to 300 at 150 mA collector current, collector-emitter saturation voltage up to 1 V at 500 mA collector current, and a transition frequency exceeding 300 MHz. Switching times are specified with delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns under specified test conditions.

Suppliers

Company
Product
Description
Supplier Links
Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro - 35C0689 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro
35C0689
Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro 35C0689
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 35C0689
Product Name Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro
Polarity NPN
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1220656 - RS Components, Ltd.
Specs
Polarity PNP
Package Type SOT23; Sot-23
Number of units in IC 1
View Details
50 V, 100 mA NPN general-purpose transistor - 2PD601ART,235 - Nexperia B.V.
Specs
Package Type SOT23; SOT23 SOT23
IC(max) 100 milliamps
VCEO 50 volts
View Details
5 suppliers
Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC847S - BC847S - Infineon Technologies AG
Specs
Polarity NPN (Dual); NPN
Package Type SOT363
Packing Method Tape Reel; TAPE & REEL
View Details