NPN silicon planar switching transistor with a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA, housed in a TO-39 metal can package measuring 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in body diameter. The device has a power dissipation of 800 mW at 25°C ambient temperature and 3 W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) range of 100 to 300 at 150 mA collector current, collector-emitter saturation voltage up to 1 V at 500 mA collector current, and a transition frequency exceeding 300 MHz. Switching times are specified with delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns under specified test conditions.
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0689 |
| Product Name | Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro |
| Polarity | NPN |