multicomp PRO Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro 2N2219A

Description
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Description
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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NPN silicon planar switching transistor with a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA, housed in a TO-39 metal can package measuring 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in body diameter. The device has a power dissipation of 800 mW at 25°C ambient temperature and 3 W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) range of 100 to 300 at 150 mA collector current, collector-emitter saturation voltage up to 1 V at 500 mA collector current, and a transition frequency exceeding 300 MHz. Switching times are specified with delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns under specified test conditions.

Datasheet Summary
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NPN silicon planar switching transistor with a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA, housed in a TO-39 metal can package measuring 8.5 to 9.39 mm in height and 7.74 to 8.5 mm in body diameter. The device has a power dissipation of 800 mW at 25°C ambient temperature and 3 W at 25°C case temperature. Electrical characteristics include a DC current gain (hFE) range of 100 to 300 at 150 mA collector current, collector-emitter saturation voltage up to 1 V at 500 mA collector current, and a transition frequency exceeding 300 MHz. Switching times are specified with delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns under specified test conditions.

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Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro - 35C0689 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro
35C0689
Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro 35C0689
TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, NPN, 40V, 800mA, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:800mA; Power Dissipation:400mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 35C0689
Product Name Transistor, Bipolar, Npn, 40V, 800Ma, To-39-3; Transistor Polarity Multicomp Pro
Polarity NPN
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