MoSys, Inc. Memory MSR622AJC288-12

Description
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)
Datasheet
Description
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MSR622AJC288-12 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)

1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MSR622AJC288-12 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MSR622AJC288-12
Integrated Circuits (ICs) - Memory - Memory MSR622AJC288-12
IC SRAM 576MBIT PAR 324PBGA

IC SRAM 576MBIT PAR 324PBGA

Supplier's Site
IC SRAM 576MBIT PAR 324PBGA

IC SRAM 576MBIT PAR 324PBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MSR622AJC288-12 MSR622AJC288-12 MSR622AJC288-12
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 2.6 ns 2.6 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 576000 kbits 576000 kbits 576000 kbits
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