Mitsubishi Electric & Electronics USA, Inc. Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric PM75RL1B120

Description
IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:595W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
  • Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric - 10N9757 - Newark, An Avnet Company
    Newark, An Avnet Company
Description
IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:595W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

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Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric - 10N9757 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric
10N9757
Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric 10N9757
IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:595W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 75A; Continuous Collector Current:75A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:595W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 10N9757
Product Name Igbt Module, 1.2Kv, 75A; Continuous Collector Current Mitsubishi Electric
PD 595000 milliwatts
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