IGBT Modules IPM MODULE L1-SERIES Product overview: PM50RL1A120 from Mitsubishi Electric is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-PM50RL1A120 can be used for catalog matching and distributor lookup.
IGBT MODULE, 1.2KV, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:462W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-PM50RL1A120 | 10N9752 |
| Product Name | IGBT Transistor | Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric |
| PD | 462000 milliwatts |
