Mitsubishi Electric & Electronics USA, Inc. Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric PM50RL1A120

Description
IGBT MODULE, 1.2KV, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:462W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
Description
IGBT MODULE, 1.2KV, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:462W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

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Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric - 10N9752 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric
10N9752
Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric 10N9752
IGBT MODULE, 1.2KV, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:462W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1.2KV, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:462W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 10N9752
Product Name Igbt Module, 1.2Kv, 50A; Continuous Collector Current Mitsubishi Electric
PD 462000 milliwatts
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