Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF UTV200

Description
Win Source Part Number: 1103550-UTV200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 28V Current - Collector (Ic) (Max): 4.5A Gain: 8.5dB ~ 9.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 470MHz ~ 860MHz Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV Temperature Range - Operating: 200°C (TJ) ECCN: OBSOLETE Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Microsemi Corporation Other Names: 150-UTV200,UTV200-ND Product Status: Obsolete
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1103550-UTV200 - Win Source Electronics
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Description
Win Source Part Number: 1103550-UTV200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 28V Current - Collector (Ic) (Max): 4.5A Gain: 8.5dB ~ 9.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 470MHz ~ 860MHz Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV Temperature Range - Operating: 200°C (TJ) ECCN: OBSOLETE Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Microsemi Corporation Other Names: 150-UTV200,UTV200-ND Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1103550-UTV200 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1103550-UTV200
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1103550-UTV200
Win Source Part Number: 1103550-UTV200 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 80W Voltage - Collector Emitter Breakdown (Max): 28V Current - Collector (Ic) (Max): 4.5A Gain: 8.5dB ~ 9.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 470MHz ~ 860MHz Mounting Type: Chassis Mount Package / Case: 55JV Supplier Device Package: 55JV Temperature Range - Operating: 200°C (TJ) ECCN: OBSOLETE Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 0000.00.0000 Mfr: Microsemi Corporation Other Names: 150-UTV200,UTV200-ND Product Status: Obsolete

Win Source Part Number: 1103550-UTV200
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 1
Power - Max: 80W
Voltage - Collector Emitter Breakdown (Max): 28V
Current - Collector (Ic) (Max): 4.5A
Gain: 8.5dB ~ 9.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 470MHz ~ 860MHz
Mounting Type: Chassis Mount
Package / Case: 55JV
Supplier Device Package: 55JV
Temperature Range - Operating: 200°C (TJ)
ECCN: OBSOLETE
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 0000.00.0000
Mfr: Microsemi Corporation
Other Names: 150-UTV200,UTV200-ND
Product Status: Obsolete

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UTV200
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UTV200
RF TRANS NPN 28V 860MHZ 55JV

RF TRANS NPN 28V 860MHZ 55JV

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1103550-UTV200 UTV200
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
TJ 200 C (392 F)
Power Gain 8.5 to 9.5 dB
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