Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF SRF4427G

The SRF4427G is a silicon RF bipolar junction transistor in an SO-8 surface mount package, designed for general-purpose RF amplifier applications such as pre-drivers and oscillators. It has a collector-emitter voltage rating of 18 Vdc, a collector current limit of 400 mA, and a maximum power dissipation of 1.5 W at 25°C, derating at 12.5 mW/°C. The device offers a maximum available gain of 20 dB at 200 MHz, a current-gain bandwidth product of 1.3 GHz, and an output capacitance of 3.4 pF. It complies with RoHS standards, as indicated by the "G" suffix denoting a lead-free terminal finish. The thermal resistance from junction to ambient is 125 °C/W.