Microsemi Corp. Bipolar Transistors - BJT Jantxv2N3810L

The Jantxv2N3810L is a PNP silicon dual transistor in a TO-78 package, qualified to MIL-PRF-19500/336. It has a collector-emitter voltage rating of 60 Vdc, a collector current limit of 50 mAdc, and a total power dissipation of 200 mW for one section or 350 mW for both sections at +25°C. The forward current transfer ratio (hFE) ranges from 150 to 450 at 100 μA to 1 mA collector current and 5.0 V collector-emitter voltage. Collector-emitter saturation voltage is 0.25 V at 1.0 mA collector current and 100 μA base current. Base-emitter saturation voltage is 0.8 V under the same conditions. The operating and storage junction temperature range is −65°C to +200°C. The device meets MIL-PRF-19500/336 qualification standards.