Microsemi Corp. Bipolar Transistors - BJT JANTXV2N2906AL

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PNP silicon small signal transistor in TO-18 package, qualified to MIL-PRF-19500/291 with JANTXV reliability level, featuring a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. Backward current transfer ratio ranges from 40 to 120 at 150 mA collector current, with collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. Package dimensions follow TO-206AA standard with emitter, base, and collector leadout.

Datasheet Summary
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PNP silicon small signal transistor in TO-18 package, qualified to MIL-PRF-19500/291 with JANTXV reliability level, featuring a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65 to +200°C. Backward current transfer ratio ranges from 40 to 120 at 150 mA collector current, with collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. Package dimensions follow TO-206AA standard with emitter, base, and collector leadout.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANTXV2N2906AL
Bipolar Transistors - BJT JANTXV2N2906AL
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTXV2N2906AL
Product Name Bipolar Transistors - BJT
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