Infineon Technologies AG Bipolar Transistors - BJT BC 847B E6327

Description
Bipolar Transistors - BJT NPN 45 V 100 mA
Description
Bipolar Transistors - BJT NPN 45 V 100 mA
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NPN silicon bipolar transistor for AF input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. DC current gain is grouped as B-range (200 to 450) at 2 mA collector current. It is RoHS compliant and meets AEC-Q101 qualification standards, except for variants with the BL3 suffix. Total power dissipation is 330 mW at ambient temperatures up to 71 °C.

Datasheet Summary
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NPN silicon bipolar transistor for AF input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. DC current gain is grouped as B-range (200 to 450) at 2 mA collector current. It is RoHS compliant and meets AEC-Q101 qualification standards, except for variants with the BL3 suffix. Total power dissipation is 330 mW at ambient temperatures up to 71 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC 847B E6327
Bipolar Transistors - BJT BC 847B E6327
Bipolar Transistors - BJT NPN 45 V 100 mA

Bipolar Transistors - BJT NPN 45 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC 847B E6327
Product Name Bipolar Transistors - BJT
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