Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2605/TR

PNP silicon low-power transistor in a TO-46 package, rated for a collector-base voltage of 70 Vdc, collector-emitter voltage of 60 Vdc, and collector current of 30 mAdc, with a total power dissipation of 400 mW at +25°C and a thermal resistance of 275 °C/mW. It has a forward-current transfer ratio ranging from 100 to 450 at I_C = 500 μA and V_CE = 5.0 V, and a collector-emitter saturation voltage of 0.3 V at I_C = 10 mA and I_B = 500 μA. The device is qualified to MIL-PRF-19500/354 and operates from -65°C to +200°C.