BC857S is a PNP silicon AF transistor array for input stages and driver applications, housed in a SOT363 package with six pins. It features two internally isolated transistors with good matching. The device has a collector-emitter voltage rating of 45 V, a collector-base voltage of 50 V, and a maximum continuous collector current of 100 mA. Peak collector current is 200 mA for pulses up to 10 ms. Total power dissipation is 250 mW at case temperatures up to 118 °C. DC current gain ranges from 200 to 630 at 2 mA collector current. Collector-emitter saturation voltage is up to 650 mV at 100 mA collector and 5 mA base current. The part is Pb-free, RoHS compliant, and qualified to AEC-Q101.
Bipolar Transistors - BJT AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 857S H6827 |
| Product Name | Bipolar Transistors - BJT |
