NPN silicon switching transistor in TO-18 package, qualified to MIL-PRF-19500/255, with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. Operating and storage junction temperature range is -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W for the TO-18 variant. Current gain (hFE) ranges from 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Switching times are 35 μs turn-on and 300 μs turn-off. Collector is internally connected to the case.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantxv2N2221A/TR |
| Product Name | Bipolar Transistors - BJT |
