Microsemi Corp. Bipolar Transistors - BJT JANTX2N918/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The JANTX2N918/TR is an NPN silicon transistor, qualified per MIL-PRF-19500/301, packaged in a TO-72 case with dimensions of 4.52 to 4.95 mm in diameter and 12.70 to 19.05 mm in length. It has a collector-emitter voltage rating of 15 Vdc, collector current of 50 mAdc, and total power dissipation of 200 mW at 25°C. The device features a forward current gain (hFE) ranging from 20 to 200 at Iₓ=3.0 mA and Vₓₑ=1.0 V, with a collector-emitter saturation voltage of 0.4 V at Iₓ=10 mA and Iₓ=1.0 mA. The operating and storage junction temperature range is -65°C to +200°C.

Datasheet Summary
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The JANTX2N918/TR is an NPN silicon transistor, qualified per MIL-PRF-19500/301, packaged in a TO-72 case with dimensions of 4.52 to 4.95 mm in diameter and 12.70 to 19.05 mm in length. It has a collector-emitter voltage rating of 15 Vdc, collector current of 50 mAdc, and total power dissipation of 200 mW at 25°C. The device features a forward current gain (hFE) ranging from 20 to 200 at Iₓ=3.0 mA and Vₓₑ=1.0 V, with a collector-emitter saturation voltage of 0.4 V at Iₓ=10 mA and Iₓ=1.0 mA. The operating and storage junction temperature range is -65°C to +200°C.

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Bipolar Transistors - BJT
JANTX2N918/TR
Bipolar Transistors - BJT JANTX2N918/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTX2N918/TR
Product Name Bipolar Transistors - BJT
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