Microsemi Corp. FETs - Single - JANTX2N6800 JANTX2N6800

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191528-JANTX2N6800 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34.75nC at 10V Gate Source Voltage (Maximum): ±20V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191528-JANTX2N6800 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34.75nC at 10V Gate Source Voltage (Maximum): ±20V
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Suppliers

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FETs - Single - JANTX2N6800 - 1191528-JANTX2N6800 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - JANTX2N6800
1191528-JANTX2N6800
FETs - Single - JANTX2N6800 1191528-JANTX2N6800
Manufacturer: Microsemi Corporation Win Source Part Number: 1191528-JANTX2N6800 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-205AF (TO-39) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 800mW, 25W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 400V Id - Continuous Drain Current: 3A Rds On (Maximum) at Id, Vgs: 1.1Ohm at 3A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34.75nC at 10V Gate Source Voltage (Maximum): ±20V

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191528-JANTX2N6800
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Power Dissipation (Maximum): 800mW, 25W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 400V
Id - Continuous Drain Current: 3A
Rds On (Maximum) at Id, Vgs: 1.1Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 34.75nC at 10V
Gate Source Voltage (Maximum): ±20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - JANTX2N6800 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
JANTX2N6800
Discrete Semiconductor Products - Transistors - FETs, MOSFETs JANTX2N6800
MOSFET N-CH 400V 3A TO205AF

MOSFET N-CH 400V 3A TO205AF

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 1191528-JANTX2N6800 JANTX2N6800
Product Name FETs - Single - JANTX2N6800 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 400 volts
QG 34.75 nC
PD 800 to 25000 milliwatts
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