Microsemi Corp. Bipolar Transistors - BJT JANTX2N3500L/TR

The JANTX2N3500L/TR is a military-qualified NPN silicon transistor for high-reliability applications in a TO-5 package, hermetically sealed with a kovar base and nickel cap, weighing 1.14 grams. It has a collector-emitter voltage rating of 150 V and collector-base voltage of 150 V, with a maximum collector current of 300 mA and power dissipation of 1.5 W at 25°C. Thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. Operating and storage junction temperatures range from -65 to +200 °C. The forward current transfer ratio (hFE) is 15 to 300 depending on collector current, with collector-emitter saturation voltage of 0.4 V at 150 mA and 15 mA base current. Base-emitter saturation voltage is 1.2 V under same conditions. Output capacitance is 8.0 pF at 10 V. The device meets MIL-PRF-19500/366 JANTX qualification.