Microsemi Corp. Bipolar Transistors - BJT Jantx2N2905AL/TR

The Jantx2N2905AL/TR is a PNP silicon switching transistor in a TO-39 package, qualified to JANTX level per MIL-PRF-19500/290 for high-reliability applications. It has a collector-emitter voltage rating of 60 V, a collector current of 600 mA, and a total power dissipation of 0.8 W at 25 °C. The thermal resistance junction-to-case is 50 °C/W, and the operating and storage junction temperature range is -65 to +200 °C. The device features a minimum current gain (hFE) of 100 at 1.0 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 1.6 V at 500 mA collector current and 50 mA base current. It is hermetically sealed with a kovar base and nickel cap, and complies with RoHS for commercial-grade variants.