Microsemi Corp. Bipolar Transistors - BJT JANTX2N2880/TR

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The JANTX2N2880 is a military-qualified NPN silicon power transistor in a TO-59 case with isolated terminals and 180-degree lead orientation, rated for 5 A collector current, 80 V collector-emitter voltage, and 2.0 W power dissipation at 25°C. It features a junction-to-case thermal resistance of 3.33°C/W, a rise time of 0.5 µs, and operates from -65°C to +200°C. The device meets MIL-PRF-19500/315 qualification criteria for JANTX level and is RoHS compliant for commercial grade variants.

Datasheet Summary
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The JANTX2N2880 is a military-qualified NPN silicon power transistor in a TO-59 case with isolated terminals and 180-degree lead orientation, rated for 5 A collector current, 80 V collector-emitter voltage, and 2.0 W power dissipation at 25°C. It features a junction-to-case thermal resistance of 3.33°C/W, a rise time of 0.5 µs, and operates from -65°C to +200°C. The device meets MIL-PRF-19500/315 qualification criteria for JANTX level and is RoHS compliant for commercial grade variants.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANTX2N2880/TR
Bipolar Transistors - BJT JANTX2N2880/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTX2N2880/TR
Product Name Bipolar Transistors - BJT
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