Microsemi Corp. Bipolar Transistors - BJT Jantx2N2222AUB

The Jantx2N2222AUB is a silicon NPN switching transistor in a 4-pin surface-mount package with a ceramic lid, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. It meets MIL-PRF-19500/255 quality standards, with thermal resistance of 325 °C/W and an operating junction temperature range of -65 to +200 °C. The device has a minimum current gain of 100 at 10 mA collector current and a collector-emitter saturation voltage of 0.3 V at 150 mA collector and 15 mA base current. The collector is internally connected to the case, and the package dimensions comply with TO-18 (TO-206AA) specifications for mounting.