Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A JANS2N2222A

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191402-JANS2N2222A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 50nA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 500mW
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191402-JANS2N2222A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 50nA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 500mW
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A - 1191402-JANS2N2222A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A
1191402-JANS2N2222A
TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A 1191402-JANS2N2222A
Manufacturer: Microsemi Corporation Win Source Part Number: 1191402-JANS2N2222A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 (TO-206AA) Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 50nA Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 500mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191402-JANS2N2222A
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-18 (TO-206AA)
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 800mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 50nA
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V
Maximum Power: 500mW

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Singapore
0.8A 50V Bipolar Transistor
2087-JANS2N2222A
0.8A 50V Bipolar Transistor 2087-JANS2N2222A
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN Product overview: JANS2N2222A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N2222A can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN Product overview: JANS2N2222A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N2222A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANS2N2222A
Bipolar Transistors - BJT JANS2N2222A
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1191402-JANS2N2222A 2087-JANS2N2222A JANS2N2222A
Product Name TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A 0.8A 50V Bipolar Transistor Bipolar Transistors - BJT
Polarity NPN NPN
Package Type SOT3
Packing Method Bulk; Bulk
TJ -65 to 200 C (-85 to 392 F) -65 C (-85 F)
Power Gain 100 dB
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