Manufacturer: Microsemi Corporation
Win Source Part Number: 1191402-JANS2N2222A
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-18 (TO-206AA)
Temperature Range - Operating: -65°C ~ 200°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 800mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 50nA
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V
Maximum Power: 500mW
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN Product overview: JANS2N2222A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANS2N2222A can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT BJTs
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1191402-JANS2N2222A | 2087-JANS2N2222A | JANS2N2222A |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - JANS2N2222A | 0.8A 50V Bipolar Transistor | Bipolar Transistors - BJT |
| Polarity | NPN | NPN | |
| Package Type | SOT3 | ||
| Packing Method | Bulk; Bulk | ||
| TJ | -65 to 200 C (-85 to 392 F) | -65 C (-85 F) | |
| Power Gain | 100 dB |