Microsemi Corp. Bipolar Transistors - BJT JANS2N2219/TR

The JANS2N2219/TR is a silicon NPN switching transistor qualified to MIL-PRF-19500/251 and available in a TO-39 package. It has a collector-emitter voltage rating of 50 Vdc, a collector-base voltage rating of 75 Vdc, and a maximum collector current of 800 mA. The device dissipates up to 3.0 W at +25°C with a thermal resistance from junction to case of 59 °C/W. The operating and storage junction temperature range is -55°C to +200°C. The transistor exhibits a minimum forward current transfer ratio of 75 at 10 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.3 V at 150 mA collector current and 15 mA base current. The turn-on time is 35 μs and the turn-off time is 300 μs. The collector is internally connected to the case.