Microsemi Corp. Bipolar Transistors - BJT JAN2N4957UB/TR

The JAN2N4957UB/TR is a military-qualified silicon PNP bipolar transistor for VHF-UHF amplifier, oscillator, and mixer applications, housed in a ceramic surface-mount UB package. It has a maximum collector-emitter voltage of -30 V, collector current of -30 mA, and total power dissipation of 200 mW at 25°C, derating linearly by 1.14 mW/°C above that. The device meets MIL-PRF-19500/426 qualification standards, with a junction and storage temperature range of -65°C to +200°C. Key electrical characteristics include a forward current transfer ratio (hFE) of 15 to 165 at -5 mA collector current, a noise figure of 3.5 dB at 450 MHz, and a small-signal power gain of 17 to 25 dB. Weight is less than 0.04 grams, and terminals feature gold plating over nickel underplate.