Microsemi Corp. Bipolar Transistors - BJT Jan2N3501/TR

The Jan2N3501/TR is a military-qualified NPN silicon transistor in the 2N3498 through 2N3501 series, designed for high-reliability and medium-power applications requiring high-frequency switching. It is available in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel-plated leads, weighing approximately 1.064 grams. The device has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a maximum power dissipation of 1.5 W at 25°C case temperature. Thermal resistance is 30 °C/W from junction to case and 175 °C/W from junction to ambient. The minimum DC current gain (hFE) is 20 at IC = 10 mA and 150 at IC = 300 mA. It meets MIL-PRF-19500/366 qualifications for JAN, JANTX, JANTXV, and JANS levels. Operating and storage junction temperatures range from -65 °C to +200 °C.