Microsemi Corp. Bipolar Transistors - BJT JAN2N2906AUB

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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The JAN2N2906AUB is a PNP small signal silicon transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It meets MIL-PRF-19500/291 quality standards and features a ceramic lid. The device has a minimum forward-current transfer ratio (hFE) of 40 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current, rising to 1.6 V at 500 mA collector current and 50 mA base current. Turn-on time is 45 µs and turn-off time is 300 µs under specified switching conditions.

Datasheet Summary
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The JAN2N2906AUB is a PNP small signal silicon transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It meets MIL-PRF-19500/291 quality standards and features a ceramic lid. The device has a minimum forward-current transfer ratio (hFE) of 40 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 15 mA base current, rising to 1.6 V at 500 mA collector current and 50 mA base current. Turn-on time is 45 µs and turn-off time is 300 µs under specified switching conditions.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JAN2N2906AUB
Bipolar Transistors - BJT JAN2N2906AUB
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JAN2N2906AUB
Product Name Bipolar Transistors - BJT
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