Microsemi Corp. Bipolar Transistors - BJT JAN2N2906AUB/TR

The JAN2N2906AUB/TR is a PNP silicon small signal transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It meets MIL-PRF-19500/291 qualification standards. The device has a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and a forward current transfer ratio (hFE) ranging from 40 to 120 at 150 mA collector current. The transistor features an operating and storage junction temperature range of -65°C to +200°C, and includes lead dimensions and case configuration as defined for the TO-18 package.