Microsemi Corp. Bipolar Transistors - BJT Jan2N2221AUB

NPN silicon switching transistor in a 3-pin TO-18 package, qualified to MIL-PRF-19500/255, with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at 25°C. The junction temperature range is -65°C to +200°C, and thermal resistance junction-to-ambient is 325 °C/W. The transistor has a minimum forward current transfer ratio of 30 at 0.1 mA collector current and 40 at 10 mA collector current, with collector-emitter saturation voltage of 0.3 V at 150 mA collector current and 15 mA base current. Package dimensions conform to TO-18 (TO-206AA) with a case connection to the collector.