Manufacturer: Microsemi Corporation
Win Source Part Number: 1096898-APTSM120AM55
Packaging: Bulk
Mounting: Chassis Mount
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: SP1
Maximum Power Dissipation: 470W
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 74A (Tc)
Gate-Source Threshold Voltage: 3V @ 2mA
Max Gate Charge: 272nC @ 20V
Max Input Capacitance: 5120pF @ 1000V
Maximum Rds On at Id,Vgs: 50 mOhm @ 40A, 20V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
SIC 2N-CH 1200V 74A SP1
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Power MOSFET | RF Transistors |
| Product Number | 1096898-APTSM120AM55CT1AG | APTSM120AM55CT1AG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APTSM120AM55CT1AG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |
| V(BR)DSS | 1200 volts | |
| QG | 272 nC | |
| PD | 470000 milliwatts |
