Microsemi Corp. FETs - Single - APTM10UM01FAG APTM10UM01FAG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 729590-APTM10UM01FAG Packaging: Bulk Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: SP6 Power Dissipation (Maximum): 2500W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 860A Rds On (Maximum) at Id, Vgs: 1.6mOhm at 275A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 12mA Gate Charge (Qg) (Maximum) at Vgs: 2100nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 60000pF at 25V
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 729590-APTM10UM01FAG Packaging: Bulk Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: SP6 Power Dissipation (Maximum): 2500W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 860A Rds On (Maximum) at Id, Vgs: 1.6mOhm at 275A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 12mA Gate Charge (Qg) (Maximum) at Vgs: 2100nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 60000pF at 25V
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FETs - Single - APTM10UM01FAG - 729590-APTM10UM01FAG - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - APTM10UM01FAG
729590-APTM10UM01FAG
FETs - Single - APTM10UM01FAG 729590-APTM10UM01FAG
Manufacturer: Microsemi Corporation Win Source Part Number: 729590-APTM10UM01FAG Packaging: Bulk Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Package: SP6 Power Dissipation (Maximum): 2500W Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 860A Rds On (Maximum) at Id, Vgs: 1.6mOhm at 275A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 12mA Gate Charge (Qg) (Maximum) at Vgs: 2100nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 60000pF at 25V

Manufacturer: Microsemi Corporation
Win Source Part Number: 729590-APTM10UM01FAG
Packaging: Bulk
Mounting Style: Chassis Mount
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: SP6
Power Dissipation (Maximum): 2500W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 860A
Rds On (Maximum) at Id, Vgs: 1.6mOhm at 275A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 12mA
Gate Charge (Qg) (Maximum) at Vgs: 2100nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 60000pF at 25V

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 729590-APTM10UM01FAG
Product Name FETs - Single - APTM10UM01FAG
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
QG 2100 nC
PD 2.50E6 milliwatts
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