Microsemi Corp. IGBT Modules APTGT75TDU60PG

Description
IGBT Modules DOR CC6525
Description
IGBT Modules DOR CC6525
Datasheet
Datasheet Summary
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APTGT75TDU60PG is a triple dual common source trench + field stop IGBT power module rated for 600 V collector-emitter voltage and 75 A continuous collector current at 80°C case temperature. It features a SP6-P package with a 12 mm profile, Kelvin emitter for easy drive, and direct mounting to a heatsink. The module supports switching frequencies up to 20 kHz, has low switching and conduction losses, and is rated for reverse bias safe operating area and avalanche energy. Junction-to-case thermal resistance is 0.60°C/W for the IGBT and 0.98°C/W for the diode, with an operating junction temperature range of -40°C to 175°C. It is RoHS compliant and supports paralleling for higher current capability.

Datasheet Summary
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APTGT75TDU60PG is a triple dual common source trench + field stop IGBT power module rated for 600 V collector-emitter voltage and 75 A continuous collector current at 80°C case temperature. It features a SP6-P package with a 12 mm profile, Kelvin emitter for easy drive, and direct mounting to a heatsink. The module supports switching frequencies up to 20 kHz, has low switching and conduction losses, and is rated for reverse bias safe operating area and avalanche energy. Junction-to-case thermal resistance is 0.60°C/W for the IGBT and 0.98°C/W for the diode, with an operating junction temperature range of -40°C to 175°C. It is RoHS compliant and supports paralleling for higher current capability.

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Sheung Wan, Hong Kong
IGBT Modules
APTGT75TDU60PG
IGBT Modules APTGT75TDU60PG
IGBT Modules DOR CC6525

IGBT Modules DOR CC6525

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number APTGT75TDU60PG
Product Name IGBT Modules
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